Manufacturer of advanced high-performance RF solutions with Gallium Arsenide (GaAs), Gallium Nitride (GaN), Surface Acoustic Wave (SAW) and Bulk Acoustic Wave (BAW) technologies.
TriQuint Semiconductor - RF Semiconductors
"1985 - A group of talented engineers found TriQuint as a spin off of Tektronix to research and develop the use of gallium arsenide (GaAs) for high performance wireless applications."
History of TriQuint -
2008 - Acquire WJ Communications in Silicon Valley, California to strengthen Networks product line in base stations. WJ Communications was founded in 1957 as Watkins-Johnson."
High Gain 35W GaN RF Power Transistors
The TriQuint T1G4003532-FS is a 35 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
2300 N.E. Brookwood Parkway, Hillsboro, OR 97124, United States.